High electrostatic discharge protection using multiple Si:N/GaN and Si:N/Si:GaN layers in GaN-based light emitting diodes

Japanese Journal of Applied Physics

Volumn 47, Issue 3 PART 1, 2008, Pages 1544-1546

  Kuan, Hon ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Breakdown voltage (VBD); Electrostatic discharge (ESD); Gallium nitrogen (GaN)

Indexed keywords

DISCHARGE (FLUID MECHANICS); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVES; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; ELECTROSTATICS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; IONIZATION OF GASES; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDES; NUCLEATION; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SILICON;

BREAKDOWN VOLTAGE (VBD); BREAKDOWN VOLTAGES; ELECTROSTATIC DISCHARGE PROTECTIONS; ESD PROTECTIONS; FABRICATED DEVICES; FORWARD VOLTAGES; GAN LAYERS; MULTIPLE LAYERS; NUCLEATION LAYERS; OUTPUT POWERS; REVERSE CURRENTS; THREADING DISLOCATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54249125604     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1544     Document Type: Article

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