A model for the thermal degradation of metal/ (p-GaN) interface in GaN-based light emitting diodes

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Meneghini, M ^a   Rigutti, L ^b   Trevisanello, L R ^a   Cavallini, A ^b   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDE; INTERFACES (MATERIALS); OHMIC CONTACTS; PASSIVATION; PYROLYSIS;

METAL/SEMICONDUCTOR INTERFACE; PASSIVATION LAYERS; SMALL SIGNAL MODELS;

LIGHT EMITTING DIODES;

EID: 41549140921     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2885703     Document Type: Article

References (10)

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