Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Mahapatra, R ^a   Chakraborty, Amit K ^b   Horsfall, A B ^a   Chattopadhyay, S ^a   Wright, N G ^a   Coleman, Karl S ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GATE DIELECTRICS; LEAKAGE CURRENTS; SILICON CARBIDE; STOICHIOMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON BEAM EVAPORATION; HAFNIUM SILICIDE; INTERFACE ENGINEERING; INTERFACIAL LAYER; THERMAL OXIDATION;

HAFNIUM COMPOUNDS;

EID: 34547598754     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756521     Document Type: Article

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