Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 315-320

  Lemberger, M ^a   Paskaleva, A ^a   Zurcher S ^b   Bauer, A J ^c   Frey, L ^a,c   Ryssel, H ^a,c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b ETH ZURICH   (Switzerland)

^c FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

High k dielectrics; MOCVD; Zirconium silicate

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SEMICONDUCTING FILMS; SILICA; SILICON WAFERS; STRESS ANALYSIS; ZIRCONIUM COMPOUNDS;

ELECTRICAL CHARACTERIZATION;

MOS CAPACITORS;

EID: 1642618684     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.010     Document Type: Conference Paper

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