High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  LeBeau, James M ^a   Jur, Jesse S ^b   Lichtenwalner, Daniel J ^b   Craft, H Spalding ^b   Maria, Jon Paul ^b   Kingon, Angus I ^b   Klenov, Dmitri O ^c   Cagnon, Joël ^a   Stemmer, Susanne ^a  

^a University of California   (United States)

^b North Carolina State University   (United States)

^c Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM; MICROSTRUCTURE; RAPID THERMAL ANNEALING; RARE EARTH ELEMENTS; SILICA; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE CONTROL;

GATE DIELECTRIC STACKS; NEGATIVE FLAT BAND VOLTAGE SHIFTS;

GATE DIELECTRICS;

EID: 41149136070     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2901036     Document Type: Article

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