Characterization of anodic SiO2 films on P-type 4H-SiC

Thin Solid Films

Volumn 517, Issue 8, 2009, Pages 2808-2812

  Woon, W S ^a   Hutagalung, S D ^a   Cheong, K Y ^a  

^a SCHOOL OF MATERIALS AND MINERAL RESOURCES ENGINEERING   (Malaysia)

Author keywords

Annealing; Anodic oxidation; Atomic force microscope; Silicon carbide

Indexed keywords

ANNEALING; ATOMIC PHYSICS; ATOMS; CHEMICAL BONDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; FIELD EMISSION; FOURIER TRANSFORMS; FRICTION; MICROSCOPES; MOS CAPACITORS; OXIDATION; PHOTORESISTS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SILICON COMPOUNDS; SILICON WAFERS; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY;

ANNEALING TEMPERATURES; ATOMIC FORCE MICROSCOPE; BARRIER HEIGHTS; CHEMICAL BONDINGS; CONDUCTION BAND EDGES; CURRENT-VOLTAGE MEASUREMENTS; DIELECTRIC CONSTANTS; EFFECTIVE OXIDE CHARGES; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FILM DENSITIES; FREE FILMS; HIGH FREQUENCY CAPACITANCES; INFRA RED SPECTROSCOPIES; LEAKAGE CURRENT DENSITIES; P TYPES; SILICON DIOXIDE FILMS;

ANODIC OXIDATION;

EID: 59149100571     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.137     Document Type: Article

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