Model for the trap-assisted tunnelling current through very thin SiO2/ZrO2 gate dielectric stacks

Semiconductor Science and Technology

Volumn 16, Issue 6, 2001, Pages 427-432

  Houssa, M ^a   Stesmans, A ^a   Heyns, M M ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS DEVICES; SILICA; ZIRCONIA;

GATE DIELECTRIC STACKS; TRAP-ASSISTED TUNNELING CURRENT;

DIELECTRIC MATERIALS;

EID: 0035362506     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/6/302     Document Type: Article

References (17)