Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1020-1024

  Toledano Luque, M ^a   San Andres E ^a   Olea, J ^a   del Prado, A ^a   Martil I ^a   Bohne, W ^b   Rohrich J ^b   Strub, E ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Hafnium oxide; Interface trap density; Sputtering

Indexed keywords

AMORPHOUS MATERIALS; DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM; MOS DEVICES; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

HAFNIUM OXIDE; HIGH PRESSURE REACTIVE SPUTTERING; INTERFACE TRAP DENSITY; SPUTTERING GAS MIXTURES;

THIN FILMS;

EID: 33846101617     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.018     Document Type: Article

References (9)

1. Lucovsky G., Fulton C.C., Zhang Y., Zou Y., Luning J., Edge L.F., et al. IEEE Trans Electron Dev 5 (2005) 65
2. Hubbard K.J., and Schlom D.G. J Mater Res 11 (1996) 2757
3. San Andrés E., Toledano-Luque M., del Prado A., Navacerrada M.A., Mártil I., González-Díaz G., et al. J Vac Sci Technol A 23 (2005) 1523
4. Nicollian E.H., and Brews J.R. MOS (Metal oxide semiconductor) physics and technology (1982), New York, Wiley
5. Fitch J.T., Kim S.S., and Lucovsky G. J Vac Sci Technol A 8 (1990) 1871
6. Kawamoto A., Jameson J., Griffin P., Cho K., and Dutton R. IEEE Electron Dev Lett 22 (2001) 14
7. Raghu P., Rana N., Yim C., Shero E., and Shadam F. J Electroch Soc 150 (2003) F186
8. Wilk G.D., Wallace R.M., and Anthony J.M. J Appl Phys 89 (2001) 5243
9. Poindexter E.H., Caplan P.J., Deal B.E., and Razouk R.R. J Appl Phys 52 (1981) 879