Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Wang, Tsung Miau ^a   Hwu, Jenn Gwo ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HARD BREAKDOWN (HBD); SOFT BREAKDOWN (SBD); VOLTAGE DROP;

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMAL EFFECTS;

MOS CAPACITORS;

EID: 13744261627     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1850199     Document Type: Article

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