Undoped-body extremely thin SOI MOSFETs with back gates

IEEE Transactions on Electron Devices

Volumn 56, Issue 10, 2009, Pages 2270-2276

  Majumdar, Amlan ^a   Ren, Zhibin ^b   Koester, Steven J ^a   Haensch, Wilfried ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

CMOSFETs; Fully depleted SOI (FDSOI); Short channel effects

Indexed keywords

BACK BIAS; BACK GATES; CMOSFETS; DEVICE PERFORMANCE; DRIVE CURRENTS; FULLY DEPLETED SOI (FDSOI); GATE DELAYS; GATE LENGTH; MOSFETS; OFF-STATE CURRENT; SHORT CHANNEL EFFECTS; SHORT CHANNELS; SILICON ON INSULATOR; SOI THICKNESS; SUBTHRESHOLD; THIN SOI;

ELECTRIC FIELDS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 70350052610     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2028057     Document Type: Article

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