Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 288-290

  Nayfeh, H M ^a   Singh, D V ^b   Hergenrother, J M ^b   Sleight, J W ^b   Ren, Z ^a   Dokumaci, O ^a   Black, L ^c   Chidambarrao, D ^a   Venigalla, R ^a   Pan, J ^c   Natzle, W ^a   Tessier, B L ^a   Ott, J A ^b   Khare, M ^a   Guarini, K W ^b   Ieong, M ^b   Haensch, W ^b  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM RESEARCH   (United States)

Author keywords

Deeply scaled CMOS; Fully depleted silicon on insulator (FD SOI); MOSFET; Strained Si; Stress; Ultrathin silicon on insulator SOI (UTSOI); Uniaxial stress

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TENSILE STRESS; ULTRATHIN FILMS;

FULLY DEPLETED SILICON-ON-INSULATOR; MOBILITY EXTRACTION; RAISED SOURCE/DRAIN ARCHITECTURE; SHORT-CHANNEL EFFECT; TENSILE UNIAXIAL STRESS;

MOSFET DEVICES;

EID: 33645648324     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.871542     Document Type: Article

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