Ultra-thin fully depleted SOI devices with thin BOX, ground plane and strained liner booster

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2006, Pages 17-18

  Gallon, C ^a,e   Fenouillet Beranger, C ^d   Vandooren, A ^c   Boeuf, F ^a   Monfray, S ^a   Payet, F ^a   Orain, S ^b   Fiori, V ^a   Salvetti, F ^b   Loubet, N ^a   Charbuillet, C ^a   Toffoli, A ^d   Allain, F ^d   Romanjek, K ^b   Cayrefourcq, I ^f   Ghyselen, B ^f   Mazure, C ^f   Delille, D ^b   Judong, F ^a   Perrot, C ^a   Hopstaken, M ^b   Scheblin, P ^d   Rivallin, P ^d   Brevard, L ^d   Faynot, O ^d   Cristoloveanu, S ^e   Skotnicki, T ^a   more..

^a STMICROELECTRONICS   (France)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

^c Freescale Semiconductors   (France)

^d CEA LETI   (France)

^e IMEP LAHC   (France)

^f PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43749089562     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2006.284410     Document Type: Conference Paper

References (15)