Mobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 78-79

  Shang, Huiling ^a   Rubino, J ^a   Doris, B ^a   Topol, A ^a   Sleight, J ^a   Cai, J ^a   Chang, L ^a   Ott, J A ^a   Kedzierski, J ^a   Chan, K ^a   Shi, L ^a   Babich, K ^a   Newbury, J ^a   Sikorski, E ^a   To, B N ^a   Zhang, Y ^a   Guarini, K W ^a   Ieong, Meikei ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENT ENHANCEMENT; HOLE MOBILITY ENHANCEMENT; SELECTIVE EPITAXY;

ELECTRON MOBILITY; HOLE MOBILITY; OSCILLATORS (ELECTRONIC); SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE; SUBSTRATES;

CMOS INTEGRATED CIRCUITS;

EID: 33745150040     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469219     Document Type: Conference Paper

References (7)

1. B. Doris, IEDM 2003
2. Z. Ren, IEDM 2003
3. K. Uchida, IEDM 2003,
4. M. Yang, IEDM 2003
5. D. Fried, IEDM 2004
6. K. Uchida, IEDM 2003
7. Z. Ren, IEDM 2002