Effects of applied mechanical uniaxial and biaxial tensile strain on the flatband voltage of (001), (110), and (111) metal-oxide-silicon capacitors

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1736-1745

  Peng, Cheng Yi ^a   Yang, Ying Jhe ^a   Fu, Yen Chun ^a   Huang, Ching Fang ^a   Chang, Shu Tong ^b   Liu, Chee Wee ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Capacitor; Deformation potential; Flatband voltage; Strained Si; Stress free

Indexed keywords

BAND EDGE; BIAXIAL STRESS; BIAXIAL TENSILE STRAIN; CONDUCTION BAND EDGE; CONDUCTION-BANDS; DEFORMATION POTENTIAL; DENSITY OF STATE; DIFFERENT SUBSTRATES; FLAT BAND; FLATBAND SHIFT; FLATBAND VOLTAGE; LOW LEVEL; MECHANICAL STRAIN; METAL-OXIDE; NET EFFECT; P-TYPE SUBSTRATES; SILICON-CAPACITOR; STRAINED-SI; THEORETICAL CALCULATIONS; UNIAXIAL STRESS; UNIAXIAL TENSILE STRAIN; VALENCE-BANDS; VOLTAGE SHIFT;

CAPACITANCE; CAPACITORS; DEFORMATION; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FERMIONS; MODULATION; TENSILE STRAIN;

SUBSTRATES;

EID: 68349155808     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2022693     Document Type: Article

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