Fabrication of high-quality p-MOSFET in Ge Grown heteroepitaxially on Si

IEEE Electron Device Letters

Volumn 26, Issue 5, 2005, Pages 311-313

  Nayfeh, Ammar ^a   Chui, Chi On ^a,b   Yonehara, Takao ^c   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

^c CANON INC   (Japan)

Author keywords

Anneal; Dislocations; Effective field; Effective mobility; Germanium; Germanium oxynitride (GOI); Heteroepitaxy; Hydrogen; Mobility; MOS devices

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EFFECTIVE MOBILITY; GERMANIUM OXYNITRIDE; HETEROEPITAXY;

MOSFET DEVICES;

EID: 19044372579     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.846578     Document Type: Article

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