Strain in epitaxial Si/SiCe graded buffer structures grown on Si (100), Si(110) and Si (111): A Raman spectroscopy study

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 203-214

  Rouchon, D ^a   Destefanis, V ^b   Hartmann, J M ^a   Crisci, A ^c   Mermoux, M ^c  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; FIELD EFFECT TRANSISTORS; GERMANIUM COMPOUNDS; GERMANIUM METALLOGRAPHY; RAMAN SPECTROSCOPY; SILICON; STRAIN; SUBSTRATES;

DIFFERENT SUBSTRATES; IN-PLANE LATTICE PARAMETERS; RAMAN CHARACTERIZATION; RAMAN FREQUENCIES; SIGE VIRTUAL SUBSTRATES; SILICON SUBSTRATES; SUBSTRATE ORIENTATION; VIRTUAL SUBSTRATES;

SI-GE ALLOYS;

EID: 63149097788     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986771     Document Type: Conference Paper

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