Strain technology under metal/high-k damascene-gate stacks

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 101-115

  Wakabayashi, Hitoshi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; GERMANIUM COMPOUNDS; LOGIC GATES; SI-GE ALLOYS; SILICON; SILICON NITRIDE; TENSILE STRESS;

DAMASCENE GATE; DAMASCENE GATE PROCESS; DUMMY GATES; GATE LENGTH; HIGH-PERFORMANCE CMOS; P-MOSFETS; STRESS SIMULATIONS; UV-RAMAN SPECTROSCOPY;

MOSFET DEVICES;

EID: 63149150576     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986757     Document Type: Conference Paper

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