The effects of mechanical uniaxial stress on junction leakage in nanoscale CMOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 2, 2008, Pages 572-577

  Wang, Tzu Juei ^a   Ko, Chih Hsin ^b   Chang, Shoou Jinn ^a   Wu, San Lein ^c   Kuan, Ta Ming ^b   Lee, Wen Chin ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Band to band tunneling (BTBT); Junction leakage; Uniaxial stress

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPRESSIVE STRESS; ELECTRON TUNNELING; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; TENSILE STRESS;

BAND-TO-BAND TUNNELING; N-CHANNEL MOS TRANSISTOR; P-CHANNEL MOS TRANSISTOR; UNIAXIAL STRESS;

LEAKAGE CURRENTS;

EID: 39749147869     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.912363     Document Type: Article

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