A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2069-2072

  Nayfeh, Hasan M ^a   Hoyt, Judy L ^b   Antoniadis, Dimitri A ^b  

^a IBM MICROELECTRONICS   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Heterostructure; Mobility enhancement; MOS devices; MOSFET; SiGe; Silicon; Strained Si n MOSFETs

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; GATES (TRANSISTOR); HETEROJUNCTIONS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

CHANNEL DOPING CONCENTRATION; MOBILITY ENHANCEMENT;

MOSFET DEVICES;

EID: 10644256631     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838320     Document Type: Article

References (10)

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