Strained Pt Schottky diodes on n-type Si and Ge

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Liao, M H ^a   Kuo, P S ^a   Jan, S R ^a   Chang, S T ^b   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CURRENT VOLTAGE CHARACTERISTICS; FINITE ELEMENT METHOD; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

CURRENT-VOLTAGE METHODS; ELECTRON BARRIER;

SCHOTTKY BARRIER DIODES;

EID: 33645664767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191831     Document Type: Article

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