Study of the preferred crystallographic orientation of polycrystalline aluminum on silicon dioxide and silicon

Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, IEDST 2007

Volumn , Issue , 2007, Pages 110-113

  Ping, Linda Zhang ^a   Huang, Ping ^b   Zhong, Yuan Jin ^b  

^a SOUTHEAST UNIVERSITY   (China)

^b Shanghai SIM BCD Semiconductor Co Ltd   (China)

Author keywords

Aluminum; Anisotropy; Crystallographic; Preferred orientation; PVD; Scanning electron microscopy; X ray diffraction

Indexed keywords

ALUMINA; ANNEALING; CRYSTAL GROWTH; CRYSTALLITE SIZE; CRYSTALLITES; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRON DEVICES; EPITAXIAL GROWTH; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; IMAGING TECHNIQUES; LIGHT METALS; METALLIC FILMS; NANOCRYSTALLINE ALLOYS; NONMETALS; OXIDE FILMS; SECONDARY EMISSION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICA; SILICON; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; SURFACE CHEMISTRY; SURFACE TENSION; TECHNOLOGY; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALUMINUM FILMS; ANISOTROPY; ANNEALING TEMPERATURE; CRYSTAL SI; CRYSTALLOGRAPHIC; CRYSTALLOGRAPHIC ORIENTATIONS; ELEVATED TEMPERATURES; FIELD-EMISSION SCANNING ELECTRON MICROSCOPY.; GRAIN SIZES; POLYCRYSTALLINE ALUMINUM; PREFERRED ORIENTATION; PVD; ROOM TEMPERATURES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR TECHNOLOGIES; SI SUBSTRATE; SILICON DIOXIDES; SURFACE ENERGIES;

ALUMINUM;

EID: 47749148130     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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