Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 81-83

  Zhu, Shiyang ^a,b   Li, Rui ^a   Lee, S J ^a   Li, M F ^a,c   Du, Anyan ^c   Singh, Jagar ^c   Zhu, Chunxiang ^a   Chin, Albert ^d   Kwong, D L ^e  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b FUDAN UNIVERSITY   (China)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Germanium; High ; Metal gate; MOSFET; Schottky

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; HAFNIUM COMPOUNDS; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH PERMITTIVITY; METAL GATE;

MOSFET DEVICES;

EID: 13444283850     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841462     Document Type: Article

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