Electroluminescence from metal/oxide/strained-Si tunneling diodes

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Liao, M H ^a   Chen, M J ^a   Chen, T C ^a   Wang, P L ^a   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CARRIER MOBILITY; CRYOSTATS; ELECTROLUMINESCENCE; MOLECULAR BEAM EPITAXY; MOS DEVICES; PHOTOLUMINESCENCE;

BIAXIAL STRAINS; DEFORMATION POTENTIALS; LIQUID PHASE DEPOSITION (LPD); TUNNELING DIODES;

LIGHT EMITTING DIODES;

EID: 20844441736     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1937989     Document Type: Article

References (18)

1. J. J. Welser, J. L. Hoyt, and J. F. Gibbons, IEEE Electron Device Lett. 15, 100 (1994).
2. M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai, Tech. Dig., Int. Electron Device Meeting, 69 (2003)
3. J. L. Hoyt, Symposium of 206th ECS Conference: SiGe: Materials, Processing, and Devices (2004), 15.
4. D. Giles, M. Armstrong, C. Auth, S. M. Cea, T. Ghani, T. Hoffmann, R. Kotlyar, P. Matagne, K. Mistry, R. Nagisetty, B. Obradovic, R. Shaheed, L. Shifren, M. Stettler, S. Tyagi, X. Wang, C. Weber, and K. Zawadzki, Symp. VLSI Tech. Dig, 118 (2004).
5. S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang, and C. W. Liu, Tech. Dig., Int. Electron Device Meeting, (2004), p. 233.
6. C. Tserbak, H. M. Polatoglou, and G. Theodorou, Phys. Rev. B 47, 7104 (1993).
7. C. G. Van de Walle, Phys. Rev. B 34, 5621 (1986).
8. Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H. C. Luan, and L. C. Kimerling, Appl. Phys. Lett. 82, 2044 (2003).
9. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, Appl. Phys. Lett. 84, 660 (2004).
10. J. C. Tsang, P. M. Mooney, F. Dacol, and J. O. Chu, J. Appl. Phys. 75, 8098 (1994).
11. X. Xiao, C. W. Liu, J. C. Stum, L. C. Lenchyshyn, and M. L. W. Thewalt, Appl. Phys. Lett. 60, 1720 (1992).
12. C. W. Liu, M.-J. Chen, I. C. Lin, M. H. Lee, and C.-F. Lin, Appl. Phys. Lett. 77, 1111 (2000).
13. R. People, IEEE J. Quantum Electron. 22, 1696 (1986)
14. EMIS Datareviews Series No. 20, Properties of Crystalline Silicon, edited by, R. Hull, (1999), p. 404.
15. C. G. Van der Walle, Phys. Rev. B 39, 1871 (1989).
16. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
17. J. J. Welser, Ph.D. thesis, Standford University, 1994.
18. S. E. Thompson, G. Sun, K. Wu, J. Lim, and T. Nishida, Tech. Dig. - Int. Electron Devices Meet., (2004), p. 221.