A study on the reliability and stability of high voltage 4H-SiC MOSFET devices

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1313-1316

  Krishnaswami, Sumi ^a   Ryu, Sei Hyung ^a   Heath, Bradley ^a   Agarwal, Anant ^a   Palmour, John ^a   Geil, Bruce ^b   Lelis, Aivars ^b   Scozzie, Charles ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

4H SiC; MOS reliability; Power MOSFET; TDDB

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATE DIELECTRICS; SILICON CARBIDE; THRESHOLD VOLTAGE;

CONSTANT GATE VOLTAGE; GATE OXIDE RELIABILITY; POST-STRESS CONDITIONS; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TECHNIQUES;

MOSFET DEVICES;

EID: 37849049903     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1313     Document Type: Conference Paper

References (2)

1. A.K. Agarwal, S. Seshadri, L.B. Roland: IEEE Elec. Dev. Letters, Vol. 18 (1997), pp. 592-594.
2. S. Krishnaswami, M. K. Das, A. K. Agarwal and J. Palmour: Mat. Res. Soc. Symp. Proc., Vol. 815 (2004), pp. 205-210.