Reliability of SiC MOS devices

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1717-1720

  Singh, Ranbir ^a   Hefner, Allen R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Dielectric; MOSFET; Reliability; SiC; Tunneling

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELDS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; RELIABILITY; SILICON CARBIDE;

GATE OXIDES; TUNNELING CURRENTS; TUNNELING SITES;

MOS DEVICES;

EID: 3142674514     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.005     Document Type: Conference Paper

References (13)

1. 2 interfaces. Journal of Applied Physics. 79(6):1996;3108-3114.
2. Agarwal A.K., Seshadri S., Rowland L.B. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors. IEEE Electron Device Letters. 18(12):1997;592-594.
3. Li H-f, Dimitrijev S, Sweatman D, Harrison HB. Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC. Proc 22nd International Conference on Microelectronics (MIEL 2000), vol. 1, Nis, Serbia, 2000. pp. 331-333.
4. 2 structures. Applied Physics Letters. 77(16):2000;2560- 2562.
5. Pananakakis G., Ghibaudo G., Kies R. Temperature dependence of the Fowler-Nordheim current in metal-oxide-degenerate structures. Journal of Applied Physics. 78(4):1995;2635-2641.
6. http://public.itrs.net/.
7. Singh R., Ryu Sei-Hyung, Capell D.C., Palmour J.W. High temperature SiC trench gate p-IGBTs. IEEE Transactions on Electron Devices. 50(3):2003;774-784.
8. Sze S.M. Physics of semiconductor devices. 1981;John Wiley & Sons, New York.
9. Chung G.Y., Tin C.C., Williams J.R., McDonald K., Di Ventra M., Pantelides S.T., et al. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide. Applied Physics Letters. 76(13):2000;1713-1715.
10. 2 interface states. Physica Status Solidi (a). 162:1997;321.
11. 2 interface and related systems. Proc Of the Interface Specialist Conference 1997. p. 101-110.
12. Schörner R., Friedrichs P., Peters D., Stephani D. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype. IEEE Electron Device Letters. 20:1999;241.
13. Singh R, Hefner AR. Reliability issues in SiC power devices, to be published in Microelectrics Reliability.