Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 /SiC interface

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Rozen, John ^a   Dhar, Sarit ^a,e   Dixit, S K ^a   Afanas'Ev, V V ^b   Roberts, F O ^c   Dang, H L ^c   Wang, Sanwu ^c   Pantelides, S T ^a   Williams, J R ^d   Feldman, L C ^a,f  

^a VANDERBILT UNIVERSITY   (United States)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF TULSA   (United States)

^d AUBURN UNIVERSITY   (United States)

^e Arkansas Power Electronics International Inc   (United States)

^f RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE INJECTION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON TUBE DIODES; HOLE TRAPS; LEAD; METALS; NITRIC OXIDE; PASSIVATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SILICON COMPOUNDS;

ACTIVE INTERFACE; AMERICAN INSTITUTE OF PHYSICS (AIP); AS-GROWN; ATOMIC CONFIGURATIONS; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; FOWLER-NORDHEIM (FN) TUNNELING; HIGH TEMPERATURE (HT); INJECTION TECHNIQUES; INTERNAL PHOTOEMISSION (IPE); METAL-OXIDE SEMICONDUCTOR (MOS); NITRIDED OXIDES; NITROGEN INCORPORATION; TRAP DENSITIES; X-RAY IRRADIATIONS;

NITROGEN;

EID: 46449095434     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2940736     Document Type: Article

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