Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET

Microelectronics Reliability

Volumn 45, Issue 1, 2005, Pages 19-30

  Tan, Shyue Seng ^a   Chen, Tu Pei ^a   Ang, Chew Hoe ^b   Chan, Lap ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; HOT CARRIERS; INTERFACES (MATERIALS); NITROGEN; REACTION KINETICS; STRESS ANALYSIS; THRESHOLD VOLTAGE;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); REACTION ENERGY; STRESS TIME; TRAPPING REACTIONS;

MOSFET DEVICES;

EID: 10044256252     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.02.015     Document Type: Article

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