Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3687-3692

  Dixit, Sriram K ^a,b   Dhar, Sarit ^a,c   Rozen, John ^b   Wang, Sanwu ^d   Schrimpf, Ronald D ^a,b   Fleetwood, Daniel M ^a,b   Pantelides, Sokrates T ^c   Williams, John R ^e   Feldman, Leonard C ^a,c  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d UNIVERSITY OF TULSA   (United States)

^e AUBURN UNIVERSITY   (United States)

Author keywords

Capacitors; Metal oxide semiconductor (MOS); Nitrided; Radiation damage; Silicon carbide (SiC); Total dose; X ray

Indexed keywords

BAND GAP; RADIATION RESPONSE; TOTAL DOSE; TRAP DENSITY;

CARRIER CONCENTRATION; ENERGY GAP; RADIATION DAMAGE; SILICA; SILICON CARBIDE; SILICON NITRIDE; X RAYS;

MOS CAPACITORS;

EID: 33846382671     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885164     Document Type: Conference Paper

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