Nitridation anisotropy in SiO2 4H-SiC

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Dhar, S ^a   Feldman, L C ^a,b,d   Chang, K C ^c   Cao, Y ^c   Porter, L M ^c   Bentley, J ^d   Williams, J R ^e  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL FACE; NITRIDATION ANISOTROPY; OXIDE COMPOSITION;

ANISOTROPY; ANNEALING; CHEMICAL REACTIONS; MOSFET DEVICES; NITRIDING; NITROGEN OXIDES; OXIDATION; PARAMAGNETIC RESONANCE; REACTION KINETICS; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICA;

EID: 17444366162     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1863423     Document Type: Article

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