Modeling and characterization of nitrogen-enhanced negative-bias temperature instability in p-channel MOSFETs

Journal of the Electrochemical Society

Volumn 154, Issue 12, 2007, Pages

  Yang, J B ^a,c   Chen, T P ^a   Tan, S S ^b   Ng, C M ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c ELECTROCHEMICAL SOCIETY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CHARGE DISTRIBUTIONS; HOLE TRAPPING CENTERS; NEGATIVE BIAS TEMPERATURE INSTABILITY; REACTION ENERGIES;

ARRHENIUS PLOTS; DIFFUSION; ELECTRONEGATIVITY; NITRIDATION; VACANCIES;

MOSFET DEVICES;

EID: 35548997826     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2783763     Document Type: Article

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