Interface properties of NO-annealed N2O-grown oxynitride

IEEE Transactions on Electron Devices

Volumn 46, Issue 12, 1999, Pages 2311-2314

  Lai, P T ^a   Xu, J P ^b   Cheng, Y C ^a,b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); NITROGEN OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

GATE DIELECTRICS; OXYNITRIDES;

MOSFET DEVICES;

EID: 0033351550     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.808070     Document Type: Article

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