Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1458-1465

  Lee, Rinus Tek Po ^a   Chi, Dong Zhi ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

External resistance; FinFET; Platinum germanosilicide; Schottky barrier

Indexed keywords

CONTACT FORMATION; DRIVE CURRENTS; EXTERNAL RESISTANCE; FIN FIELD-EFFECT TRANSISTORS; FINFET; FINFET DEVICES; FINFETS; GERMANOSILICIDE; HOLE BARRIER; MORPHOLOGICAL STABILITY; NICKEL GERMANOSILICIDE; SCHOTTKY BARRIER; SCHOTTKY BARRIER HEIGHTS; SELF ALIGNED PROCESS; SHORT-CHANNEL EFFECT; SILICON GERMANIUM; STATISTICAL COMPARISONS; STRAINED TRANSISTOR; TRANSISTOR PERFORMANCE;

GATES (TRANSISTOR); GERMANIUM; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

FIELD EFFECT TRANSISTORS;

EID: 67650098163     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2021351     Document Type: Article

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