Highly oriented Ni(Pd)SiGe formation at 400 °c

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Jin, L J ^a   Pey, K L ^a,b   Choi, W K ^a,c   Fitzgerald, E A ^a,d   Antoniadis, D A ^a,d   Pitera, A J ^a,d   Lee, M L ^a,d   Tung, C H ^a,e  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^e INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION PATTERNS; FILM TEXTURE; GERMANOSILICIDE TECHNOLOGY; STRAIN ENERGY;

CHEMICAL VAPOR DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACIAL ENERGY; PALLADIUM; STRAIN; SUBSTRATES; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NICKEL ALLOYS;

EID: 20944446249     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1899759     Document Type: Article

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