A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 26-27

  Liu, Fangyue ^a,b   Wong, Hoong Shing ^a   Ang, Kah Wee ^b   Zhu, Ming ^a   Wang, Xincai ^c   Lai, Doreen Mei Ying ^d   Lim, Poh Chong ^d   Tan, Ben Lian Huat ^b   Tripathy, S ^d   Oh, Sue Ann ^d   Samudra, Ganesh S ^a   Balasubramanian, N ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; LASERS; MESFET DEVICES; MIXING; SILICON; TECHNOLOGY;

GE CONTENT; LASER-INDUCED; LOCAL MELTING; NEW PROCESSES; PERFORMANCE ENHANCEMENTS; PERFORMANCE LEVELS; RE CRYSTALLIZATION; VLSI TECHNOLOGIES;

GERMANIUM;

EID: 51949117300     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588550     Document Type: Conference Paper

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