Energy distribution of bombarding ions in plasma etching of dielectrics

Plasma Sources Science and Technology

Volumn 18, Issue 2, 2009, Pages

  Buzzi, F L ^a   Ting, Y H ^a   Wendt, A E ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCH; ENERGY DISTRIBUTIONS; ENERGY PEAKS; ETCH RATES; ETCHING REACTION; HELICON PLASMA; HIGH ENERGY; HIGH ENERGY ION BOMBARDMENT; HIGH-ENERGY IONS; ION ENERGY DISTRIBUTIONS; LINEAR COMBINATIONS; LOWER ENERGIES; MICROELECTRONICS FABRICATION; NORMAL INCIDENCE; REACTIVE SPECIES; SHEATH ELECTRIC FIELD; SILICON DIOXIDE; SUBSTRATE ELECTRODES; SURFACE CHEMICAL COMPOSITION; WAVE FORMS;

ELECTRIC FIELDS; ELECTRIC POWER DISTRIBUTION; HELICONS; ION BEAMS; IONS; MICROELECTRONICS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; SILICA; SUBSTRATES;

ION BOMBARDMENT;

EID: 67649844004     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/18/2/025009     Document Type: Article

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