Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2425-2432

  Wang, S B ^a   Wendt, A E ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; FLUOROCARBONS; INTEGRATED CIRCUIT MANUFACTURE; INTERFACIAL ENERGY; ION BEAMS; ION BOMBARDMENT; PHOTORESISTS; PLASMA COLLISION PROCESSES; RATE CONSTANTS; REACTIVE ION ETCHING; SILICA; SILICON WAFERS; SPUTTER DEPOSITION; SUBSTRATES;

ENERGETIC IONS; ION ENERGY DISTRIBUTIONS (IED);

PLASMA ETCHING;

EID: 0035440209     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387056     Document Type: Article

References (30)