Ion bombardment energy control for selective fluorocarbon plasma etching of organosilicate glass

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 826-831

  Silapunt, R ^a   Wendt, A E ^a   Kirmse, K ^b   Losey, L P ^b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON CYCLOTRON RESONANCE; GLASS; INTEGRATED CIRCUITS; ORGANOMETALLICS; PLASMA ETCHING; SILICON CARBIDE; SILICON NITRIDE; SPUTTERING; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH RATES (ER); ETCH STOP LAYERS (ESL); ION ENERGY DISTRIBUTION (IED); ORGANOSILICATE GLASS (OSG);

FLUOROCARBONS;

EID: 2342509627     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1676641     Document Type: Article

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