Molecular dynamics simulations of Ar + bombardment of Si with comparison to experiment

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 6, 2007, Pages 1529-1533

  Humbird, David ^a   Graves, David B ^b   Stevens, A A E ^c   Kessels, W M M ^c  

^a LAM RESEARCH CORPORATION   (United States)

^b University of California   (United States)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON; INTERFACE-SENSITIVE SURFACE SPECTROSCOPY; ION ENERGY; STEADY-STATE THICKNESS;

COMPUTER SIMULATION; ION BOMBARDMENT; MICROCRYSTALLINE SILICON; MOLECULAR DYNAMICS; PARAMETER ESTIMATION; SPECTROSCOPIC ELLIPSOMETRY;

ARGON;

EID: 36048944328     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2787713     Document Type: Article

References (27)

1. H. F. Winters and J. W. Coburn, Surf. Sci. Rep. 14, 161 (1992) and references therein.
2. J. P. Chang and H. H. Sawin, J. Vac. Sci. Technol. A 15, 610 (1997).
3. A. A. E. Stevens, W. M. M. Kessels, M. C. M. van de Sander, and H. C. W. Beijerinck, J. Vac. Sci. Technol. A 24, 1933 (2006).
4. D. B. Graves and D. Humbird, Appl. Surf. Sci. 192, 72 (2002).
5. D. Humbird and D. B. Graves, J. Vac. Sci. Technol. A 23, 31 (2005).
6. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping Range of Ions in Solids (Pergamon, Oxford, 1985).
7. T. A. Schoolcraft, in 23rd International Symposium on Dry Process Conference Proceedings (The Institute of Electrical Engineers of Japan, Tokyo, Japan, 2001), pp. 29-36, and references therein.
8. L. Hanley and S. B. Sinnott, Surf. Sci. 500, 500 (2002).
9. G. J. P. Joosten, M. J. M. Vugts, H. J. Spruijt, H. A. J. Senhorst, and H. C. W. Beijerinck, J. Vac. Sci. Technol. A 12, 636 (1994).
10. M. J. M. Vugts, G. J. P. Joosten, A. van Oosterum, H. A. J. Senhorst, and H. C. W. Beijerinck, J. Vac. Sci. Technol. A 12, 2999 (1994).
11. A. A. E. Stevens and H. C. W. Beijerinck, J. Vac. Sci. Technol. A 23, 134 (2005).
12. J. J. H. Gielis, P. M. Gevers, A. A. E. Stevens, H. C. W. Beijerinck, M. C. M. van de Sauden, and W. M. M. Kessels, Phys. Rev. B 74, 165311 (2006).
13. J. Tersoff, Phys. Rev. B 38, 9902 (1988).
14. D. Humbird and D. B. Graves, Pure Appl. Chem. 74, 419 (2002).
15. F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985).
16. W. C. Swope, H. C. Andersen, P. H. Beren, and K. R. Wilson, J. Chem. Phys. 76, 637 (1982).
17. J. M. Haile, Molecular Dynamics Simulation (Wiley, New York, 1992).
18. I. Torrens, Interatomic Potentials (Academic, New York, 1972).
19. H. J. C. Berendsen, J. P. M. Postma, W. F. van Gunsteren, A. DiNola, and J. R. Haak, J. Chem. Phys. 81, 3684 (1984).
20. D. Humbird and D. B. Graves, J. Appl. Phys. 96, 791 (2004).
21. H. D. Hagstrum, Phys. Rev. 122, 83 (1960).
22. From the ellipsometry data it cannot be distinguished whether the thickness of the amorphous layer increases or whether the amorphous fraction of the layer increases with, time/fluence. For simplicity we refer to "an increasing thickness over time/fluence."
23. M. E. Barone and D. B. Graves, J. Appl. Phys. 77, 1263 (1995).
24. C. Steinbrüchel, Appl. Phys. Lett. 55, 1960 (1989).
25. W. Eckstein, C. García-Rosales, J. Roth, and J. László, Nucl. Instrum. Methods Phys. Res. B 83, 95 (1993).
26. D. Humbird and D. B. Graves, Plasma Sources Sci. Technol. 13, 548 (2004).
27. D. Humbird and D. B. Graves, J. Chem. Phys. 120, 2405 (2004).