Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 1881-1889

  Rueger, N R ^a   Beulens, J J ^a   Schaepkens, M ^a   Doemling, M F ^a   Mirza, J M ^a   Standaert, T E F M ^a   Oehrlein, G S ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKING; ENERGY DISSIPATION; FILM GROWTH; FLUOROCARBONS; MONOLAYERS; PLASMA DEVICES; POLYMERIZATION; SILICA; SPUTTER DEPOSITION; SURFACE STRUCTURE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

INDUCTIVELY COUPLED PLASMA REACTORS; REACTIVE SPUTTERING THEORY;

PLASMA ETCHING;

EID: 0031189218     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580655     Document Type: Article

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