Interface modification of the InGaN/GaN quantum wells: The strain pre-relief effect

Nanotechnology

Volumn 20, Issue 23, 2009, Pages

  Fang, Z L ^a   Lin, D Q ^a   Kang, J Y ^a   Kong, J F ^b   Shen, W Z ^b  

^a XIAMEN UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; GAN LAYERS; GROWTH STAGES; HIGH TEMPERATURE; INGAN/GAN QUANTUM WELL; INTERFACE MODIFICATION; LOW TEMPERATURES; LOWER DENSITY; PHYSICAL PHENOMENA; SURFACE COMPOSITIONS; TEMPERATURE RAMPING; ULTRA-THIN; XPS MEASUREMENTS;

AGGLOMERATION; GALLIUM ALLOYS; GALLIUM NITRIDE; MORPHOLOGY; PHASE INTERFACES; PHASE SEPARATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

SURFACE MORPHOLOGY;

ALLOY; INDIUM; QUANTUM DOT;

ARTICLE; HIGH TEMPERATURE; LOW TEMPERATURE; PHOTOLUMINESCENCE; PHYSICAL PHENOMENA; PRIORITY JOURNAL; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67649194915     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/23/235401     Document Type: Article

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