The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 740-743

  Suihkonen, S ^a   Svensk, O ^a   Lang, T ^a   Lipsanen, H ^a   Odnoblyudov, M A ^b,c   Bougrov, V E ^b,c  

^a AALTO UNIVERSITY   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

^c Optogan Oy   (Finland)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. InGaN; B1. Quantum wells; B3. Light emitting diodes

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

BUFFER THREADING DISLOCATION (TD); COMPRESSIVE STRAIN; HYDROGEN TREATMENT;

LIGHT EMITTING DIODES;

EID: 33846442397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.131     Document Type: Article

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