Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates

Journal of Physics Condensed Matter

Volumn 20, Issue 9, 2008, Pages

  Soh, C B ^a   Chow, S Y ^a   Tripathy, S ^a   Chua, S J ^a,b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN RELAXATION; SURFACE TOPOGRAPHY;

HEXAGONAL PITS; RADIATIVE EFFICIENCY;

HETEROJUNCTIONS;

EID: 41849092223     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/9/095210     Document Type: Article

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