Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

Semiconductor Science and Technology

Volumn 23, Issue 12, 2008, Pages

  Leem, Shi Jong ^a   Shin, Young Chul ^a   Kim, Eun Hong ^a   Kim, Chul Min ^a   Lee, Byoung Gyu ^a   Moon, Youngboo ^b   Lee, In Hwan ^c   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

^b Seoul National University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; DESORPTION; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH (MATERIALS); GROWTH TEMPERATURE; LIGHT EMISSION; LUMINESCENCE; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL OPTIMIZATION; SURFACE DEFECTS; SURFACE ROUGHNESS;

ATOMIC FORCES; BARRIER LAYERS; DESORPTION RATES; HIGH TEMPERATURES; INDIUM ATOMS; INGAN/GAN; INGAN/GAN MQWS; MULTIPLE QUANTUM WELLS; TEMPERATURE PROFILES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 58149465739     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/12/125039     Document Type: Article

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