Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition

Journal of Physics D: Applied Physics

Volumn 41, Issue 16, 2008, Pages

  Park, J S ^a   Moon, Yong Tae ^b   Kim, Dong Joon ^c   Park, Nae Man ^d   Yao, T ^a   Park, Seong Ju ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b LG Electronics Inc   (South Korea)

^c Samsung Electro Mechanics   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^e Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; INDIUM; OPTICAL PROPERTIES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR QUANTUM WIRES; WELLS;

HIGH RESOLUTION X-RAY DIFFRACTION; INDIUM COMPOSITION; INGAN/GAN; INTERFACE QUALITY; MULTIPLE QUANTUM WELLS; OPTICAL-; POTENTIAL WELLS; PRE-DEPOSITION; STOKES SHIFTS; STRUCTURAL PROPERTIES; ULTRAVIOLET-VISIBLE ABSORPTION SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 49749137389     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/16/165103     Document Type: Article

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