Effect of gallium nitride template layer strain on the growth of In xGa 1-xN/GaN multiple quantum well light emitting diodes

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1381-1386

  Johnson, M C ^a   Bourret Courchesne, Edith D ^a   Wu, J ^a   Liliental Weber, Z ^a   Zakharov, D N ^a   Jorgenson, R J ^b   Ng, T B ^b   McCready, D E ^c   Williams, J R ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Oriol Inc   (United States)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; ELECTROLUMINESCENCE EMISSION; THERMODYNAMIC LIMITATIONS; TRIPLE-AXIS X-RAY DIFFRACTION (TAXRD);

CONCENTRATION (PROCESS); ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; STRAIN; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4043128035     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1766407     Document Type: Article

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