Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 300, Issue 2, 2007, Pages 324-329

  Suihkonen, S ^a   Lang, T ^a   Svensk, O ^a   Sormunen, J ^a   Torma P T ^a   Sopanen, M ^a   Lipsanen, H ^a   Odnoblyudov, M A ^b   Bougrov, V E ^b  

^a AALTO UNIVERSITY   (Finland)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. InGaN; B1. Quantum wells

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

DISLOCATION DENSITY; HYDROGEN TREATMENT; MQW STRUCTURE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33847710300     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.01.006     Document Type: Article

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