Improved internal quantum efficiency of green emitting InGaN/GaN multiple quantum wells by in preflow for InGaN well growth

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 839-842

  Senthil Kumar, Muthusamy ^a   Park, Jae Young ^a   Lee, Yong Seok ^a   Chung, Sang Jo ^a   Hong, Chang Hee ^a   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

Author keywords

InGaN GaN MQWs; Internal quantum efficiency; MOCVD; Photoluminescence; Surface pit

Indexed keywords

ASTROPHYSICS; CHEMICAL VAPOR DEPOSITION; GALLIUM; INDIUM; LIGHT EMISSION; LUMINESCENCE; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL PROPERTIES; WELLS;

EMISSION ENERGIES; FLOW DURATIONS; GREEN REGIONS; IN COMPOSITIONS; INGAN/GAN; INGAN/GAN MQWS; INTERNAL QUANTUM EFFICIENCIES; INTERNAL QUANTUM EFFICIENCY; LOW PRESSURES; METAL ORGANIC; MOCVD; MQW STRUCTURES; MULTIPLE QUANTUM WELLS; PHOTOLUMINESCENCE EMISSIONS; QUANTUM WELLS; RED SHIFTS; SHORT DURATIONS; SURFACE PIT; SURFACE PIT DENSITIES; WELL GROWTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 54249104629     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.839     Document Type: Article

References (20)

1. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten: J. Appl. Phys. 87 (2000) 965.
2. T. Mukai, M. Yamada, and S. Nakamura: Jpn. J. Appl. Phys. 37 (1998) L1358.
3. Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, and S. Nakamura: Appl. Phys. Lett. 70 (1997) 981.
4. P. A. Crowell, D. K. Yong, S. Keller, E. L. Hu, and D. D. Awschalom: Appl. Phys. Lett. 72 (1998) 927.
5. P. G. Eliseev, P. Perlin, J. Lee, and M. Osinski: Appl. Phys. Lett. 71 (1997) 569.
6. K. L. Teo, J. S. Colton, P. Y. Yu, E. R. Weber, M. F. Li, W. Liu, K. Uchida, H. Tokunaga, N. Akutsu, and K. Matsumoto: Appl. Phys. Lett. 73 (1998) 1697.
7. T. Wang, J. Bai, S. Sakai, and J. K. Ho: Appl. Phys. Lett. 78 (2001) 2617.
8. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada: Appl. Phys. Lett. 73 (1998) 1691.
9. J. P. Liu, R. Q. Jin, J. J. Zhu, J. C. Zhang, J. F. Wang, M. Wu, J. Chen, Y. T. Wang, and H. Yang: J. Cryst. Growth 264 (2004) 53.
10. S.-J. Leem, M. H. Kim, J. Shin, Y. Choi, and J. Jeong: Jpn. J. Appl. Phys. 40 (2001) L371.
11. K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. F. Davis, H. Tsuda, W. Taki, N. Kuwano, and K. Oki: MRS Internet J. Nitride Semicond. Res. 2 (1997) 6.
12. Y. S. Lin, K.-J. Ma, C. Hsu, S.-W. Feng, Y.-C. Cheng, C.-C. Liao, C. C. Yang, C.-C. Chou, C.-M. Lee, and J.-I. Chyi: Appl. Phys. Lett. 77 (2000) 2988.
13. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang: Appl. Phys. Lett. 72 (1998) 710.
14. D. Cherns, S. J. Henley, and F. A. Ponce: Appl. Phys. Lett. 78 (2001) 2691.
15. H. K. Cho, J. Y. Lee, G. M. Yang, and C. S. Kim: Appl. Phys. Lett. 79 (2001) 215.
16. D. I. Florescu, S. M. Ting, J. C. Ramer, D. S. Lee, V. N. Merai, A. Parkeh, D. Lu, E. A. Armour, and L. Chernyak: Appl. Phys. Lett. 83 (2003) 33.
17. M. Senthil Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C.-H. Hong, and E.-K. Suh: J. Phys. D 40 (2007) 5050.
18. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano, and S. Sakai: Jpn. J. Appl. Phys. 37 (1998) L398.
19. T. Akasaka, H. Gotoh, H. Nakano, and T. Makimoto: Appl. Phys. Lett. 86 (2005) 191902.
20. D. M. Graham, P. Dawson, M. J. Godfrey, M. J. Kappers, P. M. F. J. Costa, M. E. Vickers, R. Datta, C. J. Humphreys, and E. J. Thrush: Phys. Status Solidi C 3 (2006) 1970.