Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Journal of Crystal Growth

Volumn 286, Issue 2, 2006, Pages 209-212

  Nanhui, Niu ^a   Huaibing, Wang ^a   Jianping, Liu ^a   Naixin, Liu ^a   Yanhui, Xing ^a   Jun, Han ^a   Jun, Deng ^a   Guangdi, Shen ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

A1. Atom force microscopy; A1. Double crystal X ray diffractometry; A1. Photoluminescence; A3. MOCVD; A3. Multiple quantum wells; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY DIFFRACTION;

CRYSTAL PROPERTIES; DOUBLE CRYSTAL X-RAY DIFFRACTOMETRY; STRAIN RELIEF LAYER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 29344442794     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.09.027     Document Type: Article

References (13)

1. S. Nakamura, T. Mukai, and M. Senoh Appl. Phys. Lett. 64 1994 1687
2. S. Nakamura, M. Senoh, and S. Nagahama Appl. Phys. Lett. 70 1997 1417
3. S. Nakamura Science 281 1998 956
4. T. Takeuchi, C. Wetzel, and S. Yamaguchi Appl. Phys. Lett. 73 1998 1691
5. J.K. Sheu, G.C. Chi, and M.J. Jou IEEE Photon. Technol. Lett. 13 2001 1164
6. Y. Chen, T. Takeuchi, and H. Amano Appl. Phys. Lett. 72 1998 710
7. I.H. Kim, H.S. Park, and Y.J. Park Appl. Phys. Lett. 73 1998 1634
8. H.K. Cho, J.Y. Lee, and G.M. Yang Appl. Phys. Lett. 79 2001 215
9. K. Kusakabe, and K. Ohkawa J. Vac. Sci. B. 21 2003 1839
10. Y.K. Chu, and J.J. Song Appl. Phys. Lett. 73 1998 1128
11. M. Buongiorno, K. Rapacewicz, and J. Bernholc Appl. Phys. Lett. 71 1997 3135
12. T. Akasaka, H. Gotoh, T. Saito, and T. Makinoto Appl. Phys. Lett. 85 2004 3089
13. D.I. Florescu, S.M. Ting, and J.C. Ramer Appl. Phys. Lett. 83 2003 33