Enhanced efficiency and reduced spectral shift of green light-emitting-diode epitaxial structure with prestrained growth

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Huang, Chi Feng ^a   Liu, Tzu Chi ^a   Lu, Yen Cheng ^a   Shiao, Wen Yu ^a   Chen, Yung Sheng ^a   Wang, Jyun Kai ^a   Lu, Chih Feng ^a   Yang, C C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS PLOTS; DEFECT DENSITY; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GROWTH (MATERIALS); INDIUM; LIGHT; LIGHT EMISSION; LUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

CARRIER LOCALIZATION EFFECTS; CONTROL SAMPLES; CONVENTIONAL GROWTHS; EMISSION SPECTRUMS; EMISSION WAVELENGTHS; ENHANCED EFFICIENCIES; ENHANCED EMISSIONS; EPITAXIAL STRUCTURES; GREEN LIGHTS; INGAN/GAN; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCIES; PL INTENSITIES; PL MEASUREMENTS; PRESTRAINED GROWTH TECHNIQUES; SPECTRAL BLUESHIFT; SPECTRAL SHIFTS;

QUANTUM EFFICIENCY;

EID: 58149262893     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3046582     Document Type: Article

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