Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers

Applied Physics Letters

Volumn 84, Issue 26, 2004, Pages 5422-5424

  Cheng, Yung Chen ^a   Wu, Cheng Ming ^a   Chen, Meng Kuo ^a   Yang, C C ^a   Feng, Zhe Chuan ^a   Li, Gang Alan ^b   Yang, Jer Ren ^a   Rosenauer, Andreas ^c   Ma, Kung Je ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b ShenZhen FangDa GuoKe OTCL ^*  (China)

^c UNIVERSITY OF KARLSRUHE   (Germany)

^d CHUNG HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; GALLIUM NITRIDE; IMAGE ANALYSIS; INTERFACES (MATERIALS); LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PHOTONS; SAMPLING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

INTERFACIAL LAYERS; PHOTON EMISSION; QUANTUM-WELL INTERFACES; RADIATIVE EFFICIENCY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3242672628     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767603     Document Type: Article

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